silicon pin photo diode high speed sensitivity common cathode type pin photo diode 1. structure 1.1 chip size : 0.68 x 0.68mm 1.2 chip thickness : 280 20um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon nitride 1.5 bonding pad size - anode(top) : 150um - cathode(bottom) : 680um x 680um 1.6 active area : 0.54mm x 0.54mm 2. electrical-optical characteristics (ta=25 ) symbol min typ max unit condition v op 0.3 0.32 v note(1) i sc 2 2.6 ua note(1) nm p 780 nm v f 0.5 1.3 v if=10ma i d 5 10 na vr=10v bv r 30 v ir=10ua note(1) : parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856k. 3. maximum ratings ( ta=25 ) symbol bv r t j eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr unit v 430~1,100 spectrum sensitivity reverse breakdown voltage junction temperature rating 30 150 reverse breakdown voltage OPD0606 parameter open circuit voltage short circuit current auk corp. parameter peak sensing wavelength forward voltage dark current unit : ?
|
